Product Details for Material from Aeroflex Metelics, Division of MACOM - JANTX2N5339 - DIODE Bipolar (BJT) Transistor NPN 100V 5A 1W Through Hole TO-39 (TO-205AD)

JANTX2N5339 Aeroflex Metelics, Division of MACOM DIODE Bipolar (BJT) Transistor NPN 100V 5A 1W Through Hole TO-39 (TO-205AD)

Part Nnumber
JANTX2N5339
Description
DIODE Bipolar (BJT) Transistor NPN 100V 5A 1W Through Hole TO-39 (TO-205AD)
Producer
Aeroflex Metelics, Division of MACOM
Basic price
11,03 EUR

The product with part number JANTX2N5339 (DIODE Bipolar (BJT) Transistor NPN 100V 5A 1W Through Hole TO-39 (TO-205AD)) is from company Aeroflex Metelics, Division of MACOM and distributed with basic unit price 11,03 EUR. Minimal order quantity is 1 pc, Approx. production time is 112 weeks.


Categories Discrete Semiconductor Products Transistors - Bipolar (BJT) - Single Manufacturer Aeroflex Metelics, Division of MACOM Series Military, MIL-PRF-19500/560 Packaging Bulk Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 5A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 1.2V @ 500mA, 5A Current - Collector Cutoff (Max) 100µA DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 2A, 2V Power - Max 1W Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-205AD, TO-39-3 Metal Can Supplier Device Package TO-39 (TO-205AD)


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